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MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
I D
E AS
P D
T J , T STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (V GS = 10V, T C < 163 o C)
Continuous (V GS = 5V, T C < 162 o C)
Continuous (V GS = 10V, T C = 25 o C, with R θ JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power Dissipation
Derate above 25 o C
Operating and Storage Temperature
Ratings
30
±20
80
80
31
Figure 4
947
254
1.7
-55 to +175
Units
V
V
A
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case
0.59
o C/W
Thermal Resistance Junction to Ambient TO-263,1in copper pad area
R θ JA
R θ JA
Thermal Resistance Junction to Ambient (Note 2)
2
62
43
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDB8860
Device
FDB8860
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 1mA, V GS = 0V
30
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 24V
V GS = 0V
V GS = ± 20V
T J = 150°C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(th)
Gate to Source Threshold Voltage
V DS = V GS , I D = 250 μ A
1
1.7
3
V
I D = 80A, V GS = 10V
-
1.6
2.3
R DS(ON)
Drain to Source On Resistance
I D = 80A, V GS = 5V
I D = 80A, V GS = 4.5V
-
-
1.9
2.1
2.6
2.7
m Ω
I D = 80A, V GS = 10V,
T J = 175°C
-
2.5
3.6
Dynamic Characteristics
C ISS
C OSS
C RSS
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
V DS = 15V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0V to 10V
-
-
-
-
-
9460
1710
1050
1.8
165
12585
2275
1575
-
214
pF
pF
pF
Ω
nC
Q g(5)
Q g(TH)
Q gs
Q gs2
Q gd
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 5V
V GS = 0V to 1V
V DD = 15V
I D = 80A
I g = 1.0mA
-
-
-
-
-
89
9.1
26
18
33
115
12
-
-
-
nC
nC
nC
nC
nC
?2010 Fairchild Semiconductor Corporation
FDB8860 Rev.A2
2
www.fairchildsemi.com
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